Exploring Energy Band-Gap Narrowing in SrVO3 Films

Understanding the impact of Cu defects on SrVO3 films is crucial for exploring energy band-gap narrowing. This blog post explores the assimilation of Cu defects in SrVO3 films using ion-implantation and the resulting alterations in lattice parameters and energy band structures.

Introduction

Investigations on the extrinsic defects induced alteration in B–O6 octahedra, energy band-structure amendments and physical assets of ABO3 perovskites are technologically important and require modest approaches for the defect creation and their investigations. In this study, Cu defects have been assimilated in SrVO3 films using 150 KeV Cu ion-implantation with two different ion fluences; 1.63 × 1015 ion/cm2 and 8.15 × 1015 ion/cm2. The implanted Cu ions do not make metallic/oxide clusters in SrVO3 films, as confirmed by XRD studies, but have facilitated the lattice parameter enlargement and energy band-gap narrowing by creating their defect states and V–O6 octahedra distortion.

NEXAFS spectra at Cu L-edge have confirmed the Cu2+ ions in low/high Cu doses implanted SrVO3 films. Cu defects induced V–O6 octahedra distortion has manifested a diverse ligand field interaction between V 3 d and O 2p ...

Overview of SrVO3 Films

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The Importance of Energy Band-Gap Narrowing

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Assimilation of Cu Defects in SrVO3 Films

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Effects of Cu Defects on Lattice Parameters and Energy Band Structures

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